? semiconductor components industries, llc, 2011 october, 2016 ? rev. 7 1 publication order number: ntd20p06l/d ntd20p06l, ntdv20p06l power mosfet ?60 v, ?15.5 a, single p?channel, dpak features ? withstands high energy in avalanche and commutation modes ? low gate charge for fast switching ? aec q101 qualified ? ntdv20p06l ? these devices are pb?free and are rohs compliant applications ? bridge circuits ? power supplies, power motor controls ? dc?dc conversion maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss ?60 v gate?to?source voltage continuous v gs 20 v non?repetitive t p 10 ms v gsm 30 continuous drain current (note 1) steady state t a = 25 c i d ?15.5 a power dissipa- tion (note 1) steady state t a = 25 c p d 65 w pulsed drain current t p = 10 s i dm 50 a operating junction and storage temperature t j , t stg ?55 to 175 c single pulse drain?to?source avalanche energy (v dd = 25 v, v gs = 5 v, i pk = 15 a, l = 2.7 mh, r g = 25 ) e as 304 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction?to?case (drain) r jc 2.3 c/w junction?to?ambient ? steady state (note 1) r ja 80 junction?to?ambient ? steady state (note 2) r ja 110 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface?mounted on fr4 board using 1 in sq. pad size (cu area = 1.127 in sq. [1 oz] including traces) 2. surface?mounted on fr4 board using the minimum recommended pad size (cu area = 0.412 in sq.) p?channel d s g 1 gate 3 source 2 drain 4 drain dpak case 369c style 2 marking diagrams 20p06l device code a = assembly location y = year ww = work week g = pb?free package 1 2 3 4 1 gate 3 source 2 drain 4 drain ipak/dpak case 369d style 2 1 2 3 4 ?60 v 130 m @ ?5.0 v i d max (note 1) v (br)dss ayww t20 p06lg ayww t20 p06lg see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information r ds(on) typ ?15.5 a www. onsemi.com
ntd20p06l, ntdv20p06l www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max units off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?60 ?74 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j ?64 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?60 v t j = 25 c ?1.0 a t j = 150 c ?10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?1.0 ?1.5 ?2.0 v gate threshold temperature coefficient v gs(th) /t j 3.1 mv/ c drain?to?source on resistance r ds(on) v gs = ?5.0 v, i d = ?7.5 a 0.130 0.150 v gs = ?5.0 v, i d = ?15 a 0.143 forward transconductance g fs v ds = ?10 v, i d = ?7.5 a 11 s drain?to?source on?v oltage v ds(on) v gs = ?5.0 v, i d = ?7.5 a t j = 25 c ?1.2 v t j = 150 c ?1.9 charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = ?25 v 740 1190 pf output capacitance c oss 207 300 reverse transfer capacitance c rss 66 120 total gate charge q g(tot) v gs = ?5.0 v, v ds = ?48 v, i d = ?18 a 15 26 nc gate?to?source charge q gs 4.0 gate?to?drain charge q gd 7.0 switching characteristics (note 4) turn?on delay time t d(on) v gs = ?5.0 v, v dd = ?30 v, i d = ?15 a, r g = 9.1 11 20 ns rise time t r 90 180 turn?off delay time t d(off) 28 50 fall time t f 70 135 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?15 a t j = 25 c 1.5 2.5 v t j = 150 c 1.3 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = ?12 a 60 ns charge time t a 39 discharge time t b 21 reverse recovery charge q rr 0.13 nc 3. pulse test: pulse width 300 s, duty cycle 2% 4. switching characteristics are independent of operating junction temperatures product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
ntd20p06l, ntdv20p06l www. onsemi.com 3 0 5 10 15 20 25 30 35 40 012345678910 ?v ds , drain?to?source voltage (v) ?i d , drain current (a) figure 1. on?region characteristics v gs = ?6 v v gs = ?5.5 v v gs = ?5 v v gs = ?4.5 v v gs = ?4 v v gs = ?3.5 v v gs = ?3 v v gs = ?10 v v gs = ?9 v v gs = ?8 v v gs = ?7 v t j = 25 c 0 10 20 30 40 0123456789 ?v ds , gate?t o?source voltage (v) figure 2. transfer characteristics ?i d , drain current (a) t j = 25 c t j = ?55 c t j = 125 c vds 10 v 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 5 10 15 20 25 30 r ds(on) , drain?to?source resistance ( ) figure 3. on?resistance versus drain current and temperature ?i d , drain current (a) t j = 125 c t j = 25 c t j = ?55 c v gs = ?5 v 0 0.025 0.05 0.075 0.1 0.125 0.15 0.175 0.2 0.225 0.25 0 3 6 9 12 15 18 21 24 v gs = ?5 v v gs = ?10 v t j = 25 c r ds(on) , drain?to?source resistance ( ) figure 4. on?resistance versus drain current and gate voltage ?i d , drain current (a) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ?50 ?25 0 25 50 75 100 125 150 r ds(on) , drain?to?source resistance (normalized) figure 5. on?resistance variation with temperature t j , junction temperature ( c) i d = ?7.5 a v gs = ?5 v 1 10 100 1000 10000 5 1015202530354045505560 figure 6. drain?to?source leakage current versus voltage ?v ds , drain?to?source voltage (v) ?i d , leakage (na) t j = 125 c t j = 150 c v gs = 0 v typical performance curves (t j = 25 c unless otherwise noted)
ntd20p06l, ntdv20p06l www. onsemi.com 4 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 ?10 ?5 0 5 10 15 20 25 gate?to?source or drain?to?source voltage (v) figure 7. capacitance variation v gs = 0 v c, capacitance (pf) v ds = 0 v t j = 25 c c iss c oss c rss c iss c rss ?v gs ?v ds 0 1.25 2.5 3.75 5.0 6.25 7.5 0481216 0 10 20 30 40 50 60 q g , total gate charge (nc) figure 8. gate?to?source and drain?to?source voltage versus total charge ?v gs , gate?to?source voltage (v) q g q gd q gs v ds v gs i d = ?15 a t j = 25 c v ds , drain?to?source voltage (v) 1 10 100 1000 1 10 100 t, time (ns) t r t f t d(off) t d(on) v dd = ?30 v i d = ?15 a v gs = ?5 v r g , gate resistance ( ) figure 9. resistive switching time variation versus gate resistance 0 5 10 15 20 0 0.25 0.5 0.75 1 1.25 1.5 1.7 5 ?i s , source current (a) ?v sd , source?to?drain voltage (v) figure 10. diode forward voltage versus current v gs = 0 v t j = 25 c
ntd20p06l, ntdv20p06l www. onsemi.com 5 0.1 1 10 100 1000 0.1 1 10 100 ?v ds , drain?to?source voltage (v) ?i d , drain current (a) figure 11. maximum rated forward biased safe operating area 100 1 10 ms dc v gs = ?15 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 0 50 100 150 200 250 300 350 25 50 75 100 125 150 t j , starting junction temperature ( c) figure 12. maximum avalanche energy versus starting junction temperature i d = ?15 a eas, single pulse drain?to?source avalanche energy (mj) 0.01 0.1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 figure 13. thermal response t, time (s) r jc( c/w) , effective transient thermal response single pulse 1 0.1 0.2 0.02 d = 0.5 0.05 0.01 ordering information device package shipping ? ntd20p06lg dpak (pb?free) 75 units / rail ntd20p06lt4g 2500 / tape & reel ntdv20p06lt4g 2500 / tape & reel ntdv20p06l t4g?vf01 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntd20p06l, ntdv20p06l www. onsemi.com 6 package dimensions dpak (single gauge) case 369c?01 issue f style 2: pin 1. gate 2. drain 3. source 4. drain 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body . 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z
ntd20p06l, ntdv20p06l www. onsemi.com 7 package dimensions ipak case 369d?01 issue c style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntd20p06l/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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